Samsung Now Mass-Producing Industry's First 2nd-Generation, 10nm-Class DRAM

Allan Goodman
December 22, 2017

This "aggressive" production expansion would "accommodate strong market demand", said Gyoyoung Jin, president of Memory Business at Samsung Electronics.

Electronics giant Samsung has become the first silicon vendor to start production of second generation DDR4 RAM chips, built on the 10nm process.

Thanks to an advanced, proprietary circuit design technology; performance levels and energy efficiency have been said to improv about 10 and 15 per cent respectively. And it can operate at 3600 megabits per second (Mbps) per pin, up from the previous-generation DRAM's 3200Mbps limit.

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According to the company, the productivity of the second-generation DRAM can be improved by approximately 30% even without any EUV exposure system. For achieving this Samsung says it has used a "high-sensitivity cell data sensing system and a progressive "air spacer" scheme". If history's any indication, it's highly likely that we'll see new products using Samsung's 2nd-generation DRAM in the near future.

In the cells of Samsung's 2nd-generation 10 nm-class DRAM, a newly devised data sensing system enables a more accurate determination of the data stored in each cell, which leads to a significant increase in the level of circuit integration and manufacturing productivity. Further, these advancements will allow Samsung to accelerate production of DDR5 Graphic Card, High Bandwidth Memory 3 (HBM3), LPDDR5 for mobile and GDDR5 Graphics. The validation process for its 2nd generation 10nm-class DDR4 modules with CPU manufacturers is already done. In addition, the capacity, speed and power efficiency of the second-generation 1y-nm DRAM are 200% of those of the same company's 2y-nm 4Gb DDR3 developed in 2012.

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